这表示每个光子的探测位准。例如,1 p.e. 脉冲相当于检测到一个光子时获得的脉冲。
精确的机械定位,用于在光模块组装过程中两个或多个光学元件之间的耦合对准。由于光学元件的定位通常需要从亚微米到几微米的精度,因此利用通过半导体工艺技术形成的高精度金属化图案和 V 形槽作为定位参考。与无源对准相比,有源对准是在使光模块发射光的同时执行光模块或光纤的定位,方法是模拟实际操作(例如,操作激光二极管发射光)并监测发射的光,以获得所需的光模块特性。
薄片形式的闪烁体。这通常是通过将闪烁体材料沉积在支撑基板上并用保护膜覆盖来制造的。
光阴极面是一种光电发射表面,通常由具有极低功函数的碱金属组成。光电倍增管中最常用的光阴极面材料如下:
1. Ag-O-Cs。使用这种材料的透射式光阴极面被命名为 S-1,它对可见光到红外辐射范围(300 nm 至 1000 nm)敏感。反射式的覆盖范围略窄,为 300 nm 至 1100 nm。由于 Ag-O-Cs 具有相对较高的热离子暗发射,因此这种光阴极面材料的光电倍增管主要用于在光阴极面冷却的情况下在红外区域中进行检测。
2. GaAs。在铯中活化的 GaAs 也被用作光阴极面。这种光阴极面材料的光谱灵敏度特性通常比多碱材料覆盖更宽的光谱响应范围,从紫外到 930 nm,在 300 nm 与 850 nm 之间的范围内相对平稳。
3. InGaAs。这种光阴极面材料在红外范围内比 GaAs 具有更大的灵敏度。此外,在 900 nm 至 1000 nm 之间的范围内,InGaAs 具有比 Ag-O-Cs 高得多的的信噪比。一些光阴极面可在 1700 nm 下工作。
4. Sb-Cs。Sb-Cs 在紫外至可见光范围内具有光谱灵敏度特性,主要用于反射式光阴极面。
5. 双碱(Sb-Rb-Cs、Sb-K-Cs)。这些材料的光谱响应范围类似于 Sb-Cs 光阴极面,但比 Sb-Cs 具有更高的灵敏度和更低的暗电流。它们还具有与 NaI 闪烁体的闪烁相匹配的蓝敏度指数,因此经常用于使用闪烁计数的辐射测量。
6. 高温双碱或低噪声双碱 (Na-K-Sb)。这种材料在较高的工作温度下尤其有用,因为它可以承受高达 175°C 的温度。在室温下,此光阴极面以极低暗电流运行,因此成为光子计数应用的理想选择。
7. 多碱 (Na-K-Sb-Cs)。多碱光阴极面具有从紫外到近红外区域的高、宽光谱灵敏度特性。它广泛用于宽带分光光度计和光子计数应用。通过特殊的光阴极面活化处理,长波长响应可以扩展到 930 nm。
8. Cs-Te、Cs-I。这些材料对真空紫外线和紫外线敏感,但对可见光不敏感,因此被称为日盲。Cs-Te 对超过 320 nm 的波长相当不敏感,而 Cs-I 对超过 200 nm 的波长不敏感。
一种光电传感器,在光照下会提高导电性。运行光电导探测器需要外部电源。光电导探测器包括 MCT (HgCdTe)、PbS、PbSe 等。
物质吸收光并产生自由电子的现象。
PMT 具有极高增益的低噪声放大器。这种机理能够将单个电子放大成可检测信号。通常将这些单电子脉冲求和并读取为直流电流。然而,可以对单个电子脉冲进行计数;由于每个脉冲代表一个光子,因此这种方法被称为光子计数。它在噪声和稳定性以及数字检测的便利性方面具有一些优势。
这是衡量入射光子被检测到的百分比的指标。PDE 通过以下公式表示。随着反向电压的增加,雪崩概率 (Pa) 变大。$$PDE = QE \cdot fg \cdot Pa$$
图像传感器或 CCD 中排列的每个光电二极管阵列都经过精心制造,以提供均匀的性能,但每个光电二极管在灵敏度方面也表现出微小的不均匀性。这可能是由于硅基板中的晶体缺陷、晶圆工艺的变化和制造过程中的扩散导致的。这种不均匀性通常被称为灵敏度不均匀性。
器件中实际收集光并将其转换为电子的区域。在我们的数据中,圆形的受光面用一个尺寸标注,四边形的受光面用两个尺寸标注。一些 PMT 尺寸被描述为 2π、正方形或六边形。
以安培 (A) 表示的光电流或以伏特 (V) 表示的输出电压与以瓦特 (W) 表示的入射光量的比值。感光灵敏度以绝对灵敏度(A/W 或 V/W)或者归一化为 100 的峰值波长灵敏度的相对灵敏度 (%) 表示。我们通常将光谱响应范围定义为相对灵敏度比峰值灵敏度高 5% 或 10% 的范围。
一种半导体光电传感器,当光照射到其 PN 结时会产生电流或电压。它能够在没有外部电源供电的情况下工作。光伏元件包括 Si、InGaAs、GaAsP、GaAs、InAs、InSb 等。
当光斑照射到 PSD 上并且从 PSD 的每个输出端子提取的生成电流相等时,光斑的入射位置被称为 PSD 的电中心。将此电中心视为原点,位置检测误差被定义为光斑实际入射到 PSD 上的位置与根据光电流计算的位置之间的差异。我们在以下条件下测量位置检测误差:
入射到 PSD 的感光面上的光斑的最小可检测位移,表示为 PSD 的感光面上的距离。此位置分辨率由信噪比决定,计算公式为:PSD 电阻长度 x 噪声/信号。我们定义了基于在以下条件下测量的均方根 (rms) 噪声计算的位置分辨率:
器件允许的最大功耗,根据封装和芯片的温度上限计算。在大多数情况下,这由器件中易受热量影响的元件决定。使用一个称为“降额”的系数可以计算在实际使用器件的温度下功率损耗的绝对最大额定值。例如,如果将 500 mW 的功率损耗定义为 25°C 时的绝对最大额定值,降额为 5 mW/°C,则 85°C 时的绝对最大额定值将为:500 mW - 5 mW/°C x (85 °C - 25 °C) = 200 mW。
信号从发射点到接收点所需的时间。该术语通常表示电路和光学元件中的总延迟时间,以及介质(光纤等)中的延迟时间。变化的传播延迟时间称为抖动或漂移。抖动是传播延迟时间的波动,发生在短时间内,主要由噪声引起。漂移是主要由热因素引起的长期波动。
位置敏感探测器 (PSD) 包含一个单片 PIN 光电二极管,在一个或两个维度上具有均匀的电阻。与离散元件探测器相比,PSD 具有许多优势,包括高位置分辨率、快速响应速度和简单的工作电路。位置数据与探测器上的光斑大小无关。它们可用于非接触式测距、激光光束对准和对物体的光学跟踪。还可以提供用于跟踪电子或高能粒子的 PSD。
滨松制造以下产品:
1D PSD:单片硅探测器使用表面电阻提供连续的一维位置信息。
2D PSD:单片硅探测器使用表面电阻提供连续的二维位置信息。某些光电倍增管也可以用于提供二维位置信息。
特殊类型:许多产品可以提供与 PSD 相同的功能,但不属于相同的一般类别。其中包括离散 PSD 阵列、可从光电二极管切换到 PSD 的器件、非线性输出 PSD 和 PSD 角度传感器。信号处理电路。可以使用各种类型的信号处理电路跟踪光斑,与入射光量无关。这些电路板可用于一维或二维以及针垫式、四边形或蜂房式 PSD。信号处理板具有小型化且易于使用的特点,无需复杂的调整。只需连接 PSD 和 +15V 电源即可进行测量。
一种看似不规则(并非真的不规则)的编码字符串,用于测量误码率和眼图。在常用的伪随机模式中,0 和 1 的事件概率相等,因此伪随机模式可以相对容易地由使用移位寄存器和反馈的电路生成。
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